| PART |
Description |
Maker |
| KTK5131E |
SMOS FET/ Analog Switch Application
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING/ ANALOG SWITCH)
|
Korea Electronics (KEC)
KEC(Korea Electronics)
|
| 10-FY07BIA050SM-M523E38 10-FY07BIA050SM-M523E38-3 |
Ultra High-Speed IGBT and Diode
|
Vincotech
|
| 1SS361 |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
|
Toshiba Semiconductor
|
| 1SS300 |
DIODE (ULTRA HIGH SPEED SWTHCING PPLICATION)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 1SS308 |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 5962F9467602VPA 5962F9467602VPC HS7B-1100RH-Q HS7- |
Radiation Hardened/ Ultra High Speed Current Feedback Amplifier with Offset Adjust
Radiation Hardened, Ultra High Speed
Current Feedback Amplifier(抗辐射超高速电流反馈放大器)
Hook-Up Wire; Conductor Size AWG:22; No. Strands x Strand Size:7 x 30; Jacket Color:Gray; Cable/Wire MIL SPEC:MIL-W-76C Type MW; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes
Radiation Hardened, Ultra High Speed Current Feedback Amplifier VIDEO AMPLIFIER, CDIP8
Radiation Hardened, Ultra High Speed Current Feedback Amplifier 1 CHANNEL, VIDEO AMPLIFIER, CDIP8
Radiation Hardened, Ultra High Speed Current Feedback Amplifier
|
Intersil Corporation
Intersil, Corp.
|
| 1SS336 E000277 |
From old datasheet system
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
|
TOSHIBA[Toshiba Semiconductor]
|
| KDS190 |
SILICON EPITAXIAL PLANAR DIODE (ULTRA HIGH SPEED SWITCHING)
|
KEC Holdings
KEC[KEC(Korea Electronics)]
|
| 1SS360 E000284 |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| KDS142E |
SILICON EPITAXIAL PLANAR DIODE (ULTRA HIGH SPEED SWITCHING)
|
KEC[KEC(Korea Electronics)]
|
| KDS121 |
SILICON EPITAXIAL PLANAR DIODE (ULTRA HIGH SPEED SWITCHING)
|
KEC Holdings
KEC(Korea Electronics)
|
